| PART |
Description |
Maker |
| BAL-NRF01D3 |
50Ω nominal input / conjugate match balun to nRF24LE1 & nRF51822-QFAA, with integrated harmonic filter
|
ST Microelectronics
|
| NTE15049AC NTE15040-ECG NTE15048-ECG NTE15050AC NT |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC.
Surge arrester (gas filled). Nominal breakdown voltage 600VDC
Surge arrester (gas filled). Nominal breakdown voltage 230VDC
Surge arrester (gas filled). Nominal breakdown voltage 300VDC
Surge arrester (gas filled). Nominal breakdown voltage 90VDC
Surge arrester (gas filled). Nominal breakdown voltage 110VDC
Surge Arresters (Gas Filled) 避雷器（充气
Surge arrester (gas filled). Nominal breakdown voltage 350VDC
Surge arrester (gas filled). Nominal breakdown voltage 145VDC
Surge arrester (gas filled). Nominal breakdown voltage 470VDC
Surge arrester (gas filled). Nominal breakdown voltage 75VDC
Surge arrester (gas filled). Nominal breakdown voltage 120VAC.
|
NTE Electronics, Inc.
|
| KR-1400AE |
Nominal capacity: 1400mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 10.0mOhm cadnica
|
SANYO
|
| KR-1200AAE |
Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica
|
SANYO
|
| KR-1100AAU |
Nominal capacity: 1100mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 19.0mOhm cadnica
|
SANYO
|
| DR1P5-05D05 DR1P5-05D12 DR1P5-05D15 DR1P5-05S05 DR |
All specifications are typical at nominal input, full load and 25C otherwise noted
|
RSG Electronic Components GmbH
|
| 2450FB15K0003 |
2.45 GHz, conjugate match for CSR Chipsets BC 04, 05
|
Johanson Technology Inc.
|
| ACB-12-1931 |
power 6 CCFLs to a nominal power level of 32.4 Watts from an input voltage of 12V.
|
Applied Concepts Inc.
|
| 2450FB15M000109 2450FB15M0001-09 |
2.45 GHz Filter Balun, conjugate match for MTK and BC05 chipsets
|
Johanson Technology Inc.
Johanson Technology Inc...
|
| NTE5296A NTE5240A NTE5241A NTE5242A NTE5243A NTE52 |
50 watt zener diode, -5% tolerance. Nominal zener voltage Vz = 52.0V. Zener test current Izt = 240mA.
50 watt zener diode, -5% tolerance. Nominal zener voltage Vz = 33.0V. Zener test current Izt = 380mA.
50 watt zener diode, -5% tolerance. Nominal zener voltage Vz = 180.0V. Zener test current Izt = 68mA.
50 Watt Zener Diodes ±5% Tolerance
50 Watt Zener Diodes 5% Tolerance
50 WATT ZENER DIODES 【5% TOLERANCE
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
50 watt zener diode, -5% tolerance. Nominal zener voltage Vz = 13.0V. Zener test current Izt = 960mA.
50 watt zener diode, -5% tolerance. Nominal zener voltage Vz = 43.0V. Zener test current Izt = 290mA.
|
NTE[NTE Electronics]
Fujitsu, Ltd.
NTE Electronics, Inc.
|
| 1N5524 1N5532 1N5540C 1N5541C 1N5539C 1N5543C 1N55 |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. -5% tolerance.
0.4W LOW VOLTAGE AVALANCHE DIODES
0.4 W, low voltage avalanche diode. Nominal zener voltage 17.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. -1% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 14.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. -20% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. -2% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4W LOW VOLTAGE AVALANCHE DIODES 0.4瓦，低电压雪崩二极管
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. -2% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 24.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. -2% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 15.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. -10% tolerance.
|
Jinan Gude Electronic D...
娴???洪??靛??ㄤ欢??????
Jinan Gude Electronic Device Co., Ltd.
济南固锝电子器件有限公司
JGD[Jinan Gude Electronic Device]
|
| C2260A1-002808 |
Nominal frequency (f0)
|
Vectron International, Inc
|
