| PART |
Description |
Maker |
| FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode
Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ
Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
| U30D30 U30D40 U30D50 U30D60 U30D40A |
Switchmode dual ultrafast power rectifier, 30A, 400V, 50ns
POWER RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| FDS6911 |
Fast switching speed, Low gate charge
Dual N-Channel Logic Level PowerTrench? MOSFET 20V, 7.5A, 13mΩ
Dual N-Channel Logic Level PowerTrench㈢ MOSFET 20V, 7.5A, 13mヘ
Dual N-Channel Logic Level PowerTrench??MOSFET 20V, 7.5A, 13m??/td>
| SOP
|
List of Unclassifed Manufacturers
FAIRCHILD[Fairchild Semiconductor]
|
| M39208-10WNA6T M39208-12WNA1T M39208-12WNB6T M3920 |
256K X 8 FLASH 2.7V PROM, 120 ns, PDSO32
256K X 8 FLASH 2.7V PROM, 150 ns, PDSO32
256K X 8 FLASH 2.7V PROM, 100 ns, PDSO32
RECTIFIER SCHOTTKY DUAL 5A 40V 110A-Ifsm 0.5Vf 0.2A-IR PowerDI-5 5K/REEL 单芯2 Mbit闪存4千位并行EEPROM存储
Single Chip 2 Mbit Flash and 64 Kbit Parallel EEPROM Memory 单芯2 Mbit闪存4千位并行EEPROM存储
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1.3V-vf 150ns 5uA-ir A405 5K/REEL-13
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1.3V-vf 150ns 5uA-ir DO-41 5K/REEL-13
RECTIFIER SCHOTTKY SINGLE 10A 40V 275A-Ifsm 0.51Vf 0.7A-IR PowerDI-5 5K/REEL
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1.2V-vf 150ns 5uA-ir DO-41 5K/REEL-13
DIODE, SCHOTTKY, 40V, 10A, POWER DI 5
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1.3V-vf 150ns 5uA-ir DO-41 5K/REEL-13
|
NUMONYX
STMicroelectronics N.V.
ST Microelectronics
意法半导
|
| SB300-05R |
50V/ 30A Rectifier
50V, 30A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MBRF30H100CT MBR30H100CT MBRB30H100CT MBRB30H90CT |
High-Voltage Dual Schottky Rectifiers Forward Current 30A Maximum TJ 175C Reverse Voltage 90 to 100V
|
Vishay Intertechnology,Inc.
http://
ON Semiconductor
VISAY[Vishay Siliconix]
|
| MG042L14V400RP MG042S05X150RP MG054L18V500DP MG054 |
BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE CERAMIC PACKAGE-4
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:18V; Capacitance, Cd:75pF; Package/Case:0612; Clamping Voltage Max, Vc:50V; Leaded Process Compatible:Yes; Peak Pulse Current IPP @ 8x20uS:20A
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:9V; Breakdown Voltage, Vbr:12.7V; Capacitance, Cd:550pF; Package/Case:0612; Clamping Voltage Max, Vc:20V; Leaded Process Compatible:Yes
|
AVX Corporation
AVX, Corp.
|
| 15KPJ45 15KPJ45A 15KPJ45C 15KPJ45CA 15KPJ58 15KPJ5 |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 376 V @ Ipp = 40 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/205.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 259 V @ Ipp = 58 A.
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/182.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 231 V @ Ipp = 65 A.
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/169.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 214 V @ Ipp = 70 A.
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特175000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压20伏特75000脉冲峰值功率）
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) 玻璃钝化结瞬态（电压抑制电压220伏特75000脉冲峰值功率）
Glass passivated junction transient voltage suppressor. Vrwm = 120 V. Vbr(min/max) = 133/153.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 193 V @ Ipp = 78 A.
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/217.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 275 V @ Ipp = 55 A.
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/140.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 177 V @ Ipp = 85 A.
Glass passivated junction transient voltage suppressor. Vrwm = 170 V. Vbr(min/max) = 189/239.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 304 V @ Ipp = 49 A.
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A.
|
Pan Jit International I...
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
PanJit International, Inc.
|
| FME-230A |
Schottky Barrier Diode - 90V/100V
100V, 30A Schottky barrier diode in TO220F package
100V/ 30A Schottky barrier diode in TO220F package
CRYSTAL 20.000000 MHZ SMD 8PF
|
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| ITF87072DK8T FN4812 |
6A, 20V, 0.037 Ohm, Dual P-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.037Ω双组 P沟道2.5V专用功率MOS场效应管)
From old datasheet system
6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET
|
Intersil Corporation
|
