| PART |
Description |
Maker |
| ST3403 |
P Channel Enchancement Mode MOSFET
|
STANSON[Stanson Technology]
|
| ST6006T220TG ST6006 ST6006S ST6006T220RG |
N Channel Enchancement Mode MOSFET
|
STANSON[Stanson Technology]
|
| AN01 AN0120NB AN0132WG AN0132 AN0120NA AN0120ND AN |
Circular Connector; No. of Contacts:6; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:8; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:8-35 RoHS Compliant: No
Circular Connector; No. of Contacts:128; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:24; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
JT 6C 6#22D PIN RECP
JT 128C 128#2D SKT RECP
JT 6C 6#22D SKT RECP
JT 128C 128#22D PIN RECP
8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 8通道阵列单片功率MOSFET N沟道增强模式
|
Supertex Inc
SUTEX[Supertex, Inc]
Supertex Inc
Supertex, Inc.
|
| STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STB11NB40 5418 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的（不适用沟道增强模式MOSFET的）
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| APM3095PUC-TU APM3095PUC-TUL APM3095PUC-TRL |
P-Channel Enhancement Mode MOSFET 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252
P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics Corporation
Anpec Electronics, Corp.
|
| STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| TN2410L VN2406E |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电40V，夹断电.18AN沟道增强型MOSFET晶体
N-Channel Enhancement-Mode MOSFET(???婕???荤┛?靛?40V锛?す???娴?.18A??娌??澧?己??OSFET?朵?绠?
|
Vishay Intertechnology,Inc.
|
| FDS8936S |
Dual N-Channel Enhancement Mode Field Effect Transistor 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FDS8926A |
Dual N-Channel Enhancement Mode Field Effect Transistor 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| UT4812Z UT4812ZG-S08-R |
DUAL N-CHANNEL ENHANCEMENT MODE
30 V, 0.028 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE, SOP-8
|
Unisonic Technologies Co., Ltd.
|
