| PART |
Description |
Maker |
| IKW30N60H3 |
High speed Duopack : IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| STGP15H60DF |
Trench gate field-stop IGBT, H series 600 V, 15 A high speed
|
ST Microelectronics
|
| IKW15N120H3 |
High speed Duopack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode
|
http://
|
| IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100 |
Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
Low V High speed IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| STGWT80V60F STGFW80V60F |
Low thermal resistance
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
|
STMicroelectronics
ST Microelectronics
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| IXGP16N60C2D1 IXGA16N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
IXYS, Corp.
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IXGH40N60 IXGH40N60A IXGM40N60A IXGM40N60 |
Low VCE(sat) IGBT, High speed IGBT
|
IXYS[IXYS Corporation]
|
