| PART |
Description |
Maker |
| GSIONIRUH33P253B1M |
Total Ionizing Dose Test Report
|
International Rectifier
|
| RDHA701CD10A2NK |
Neutron and Total Ionizing Dose Test
|
International Rectifier
|
| UT54LVDS032-UPX 5962H9583401QXA 5962H9583401QXC 59 |
Quad receiver: SMD. QML class V. Lead finish factory option. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class V. Lead finish hot solder dipped. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish gold. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class V. Lead finish gold. Total dose 1E6 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish gold. Total dose 1E6 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish hot solder dipped. Total dose 1E6 rad(Si).
Quad Receiver 四接收机
Triple 3-input positive-AND gates 14-PDIP 0 to 70
Quad receiver: SMD. QML class Q. Lead finish hot solder dipped. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class Q. Lead finish factory option. Total dose 5E5 rad(Si).
Quad receiver: SMD. QML class V. Lead finish gold. Total dose 5E5 rad(Si).
|
Aeroflex, Inc.
Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Circuit Techno...
|
| AM29C60-1JCB AM29C60A/BYC AM29C60-1/BXC AM29C60-1D |
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package; Similar to IRHN9130 with optional Total Dose Rating of 300kRads
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA597064 with Standard Packaging
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package; Similar to IRH9130 with optional Total Dose Rating of 300kRads
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package; A IRHLF77110 with Standard Packaging
130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package; A IRHMS57163SE with Standard Packaging
250V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-254AA package. Also available with Total Dose Rating of 300kRads.; A IRHMS67264 with Standard Packaging
250V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a Low-Ohmic TO-254AA package. Also available with Total Dose Rating of 300kRads.; Similar to IRHMS67264 with Total Dose Rating of 300kRads.
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package; JANS Certified device. Equivalent to IR Part Number IRHF57230SE
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package; Similar to IRHE57034 with optional Total Dose Rating of 500kRads
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package; Similar to IRHE57034 with optional Total Dose rating of 1000kRads
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package; A IRHNJ9130 with Standard Packaging
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package; A IRHN7450SE with Standard Packaging
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package; Similar to IRHMS597260 with optional Total Dose Rating of 300kRads
500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-3 package; A IRHNB7460SE with Standard Packaging
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package; JANS Certified version of the IRHE57034 with optional Total Dose Rating of 500kRads 错误检
|
Amphenol, Corp.
|
| UT28F256 UT28F256T-45UPX 5962F9689103QXA 5962F9689 |
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
320 x 240 pixel format, LED or CFL Backlight
Recalibration Service for 2120B B&K Oscilloscope
Oscilloscope; Scope Type:Analog; Scope Bandwidth:30 MHz; Scope Channels:2 Scope; Calibrated:No; Rise Time:12ns; Sensitivity:5 mV/div to 5 V/div; Accuracy: /- 3 %; Resistance:1Mohm
Recalibration Service for 2125A B&K Oscilloscope
Radiation-Hardened 32K x 8 PROM 辐射加固32K的8胎膜早破
Recalibration Service for 2120B B&K Oscilloscope 辐射加固32K的8胎膜早破
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 40ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 45ns acces time, TTL inputs, CMOS/TTL compatible outputs. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-Hardened 32K x 8 PROM
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
NEC, Corp.
Aeroflex Circuit Techno...
|
| 5962-0151101TXC 5962-0151101QXC 5962-0151101 UT9Q5 |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)).
UT9Q512K32 16Megabit SRAM MCM
UT9Q512K32 16Megabit SRAM MCM
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)).
|
AEROFLEX[Aeroflex Circuit Technology]
|
| 5962RTBD02QYA 5962RTBD02QYC 5962RTBD02QYX 5962RTBD |
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish hot solder dipped. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish gold. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish factory option. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish hot solder dipped. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish gold. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish factory option. Total dose 1E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish hot solder dipped. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish gold. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish factory option. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish hot solder dipped. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish gold. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish factory option. Total dose 3E5 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish hot solder dipped. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish hot solder dipped. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish gold. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class Q. Lead finish factory option. Total dose 1E6 rad(Si).
Low voltage quad receiver with integrated termination resistor: SMD. Class V. Lead finish gold. Total dose 5E5 rad(Si).
|
Aeroflex Circuit Technology
|
| 5962H9475407QLC 5962F9475401QLA 5962F9475401QLC 59 |
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class G. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 25ns propagation delay, TTL I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 25ns propagation delay, CMOS I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 25ns propagation delay, TTL I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, CMOS I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, TTL I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class Q. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 3E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 20ns propagation delay, TTL I/O. Class Q. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish gold.
Radiation Hardened PAL: SMD. Total dose 5E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E6 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish solder.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 15.5ns propagation delay, CMOS I/O. Class V. Lead finish optional.
Radiation Hardened PAL: SMD. Total dose 1E5 rads(Si). 20ns propagation delay, TTL I/O. Class V. Lead finish gold.
|
Aeroflex Circuit Technology
|
| 5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 59 |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)).
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Aeroflex Circuit Technology
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| 5962-9659401QRX |
RadHard MSI: SMD. Octal driver, w/three-state outputs. Class Q, QML. Lead finish optional. Total dose none.
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Aeroflex Circuit Technology
|
| IRHNJ63130SCS |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads.
|
International Rectifier
|
| 2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads.
|
International Rectifier
|
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