| PART |
Description |
Maker |
| BLM7G1822S-40PB BLM7G1822S-40PBG |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM7G1822S-80AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| MW5IC970GNBR1 MW5IC970NBR1 MW5IC970NBR108 |
RF LDMOS Wideband 2-Stage Power Amplifiers
|
Freescale Semiconductor, Inc
|
| MW5IC970NBR1 |
RF LDMOS Wideband 2-Stage Power Amplifiers
|
FREESCALE[Freescale Semiconductor, Inc]
|
| CGY93P |
GSM 2 stage Power Amplifier MMIC
|
Infineon
|
| Q68000-A6887 CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q68000-A8883 CGY181 |
GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BLF7G22LS-100P |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| 0805 1008 T491X226K035AS 100B100JCA500X 100B120JP5 |
RF LDMOS Wideband Integrated Power Amplifiers
MW4IC001MR4 W-CDMA 0.8-2.17 GHz, 900 mW, 28 V RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, In...
FREESCALE[Freescale Semiconductor, Inc]
Motorola
|
| BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| Q68000-A4444 CGY40 |
From old datasheet system
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
