PART |
Description |
Maker |
AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
AT-41535 AT-41535G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
AVAGO TECHNOLOGIES LIMITED
|
AT-41470 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AA028N1-99 |
230 GHz Low Noise Amplifier GT 14C 10#12 4#16 SKT PLUG 23-30 GHz Low Noise Amplifier
|
Alpha Industries Inc Alpha Industries, Inc. ALPHA[Alpha Industries] http://
|
AT-41435 AT41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Search -----> AT-41435
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
Q62702-F788 A0536 BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications) From old datasheet system NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range and broadband analog and digital applications)
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BAT15-098 Q62702-A0062 BAT15_98 |
From old datasheet system Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) 硅肖特基二极管(星展混合器的应用10 GHz低噪声系数低屏障型)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
Q62702-F1189 BFQ82 |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|