| PART |
Description |
Maker |
| 93334L-S08-R 93334L-S08-T 93334-S08-R 93334-S08-T |
HIGH ENERGY IGNITION CIRCUIT SPECIALTY ANALOG CIRCUIT, PDSO8
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| MCC3334 |
HIGH ENERGY IGNITION CIRCUIT
|
Motorola, Inc
|
| 9333407 93334-S08-T |
HIGH ENERGY IGNITION CIRCUIT
HIGH ENERGY IGNITION CIRCUIT
|
Unisonic Technologies
|
| ICC03-400B2 3744 |
IGNITION CONTROL CIRCUIT
IGNITION CONTROL CIRCUIT - (ASD)
IGNITION CONTROL CIRCUIT - (ASD)
From old datasheet system
GT 60C 60#16 PIN RECP WALL RM
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| NGD18N40CLB NGD18N40CLBT4 |
From old datasheet system
Ignition IGBT 18 Amps, 400 Volts
Ignition IGBT 18 A, 400 V, N-Ch DPak with Improved SCIS energy and Vce(on)
|
http://
ON Semiconductor
ONSEMI
|
| KGF40N60KDA |
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.
|
KEC(Korea Electronics)
|
| SFT1002 SFT1004 SFT1012 SFT1010 SFT1014 SFT1016 |
250 V, 100 A high speed NPN transistor
120 V, 100 A high energy NPN transistor
100 V, 100 A high energy NPN transistor
140 V, 100 A high energy NPN transistor
160 V, 100 A high energy NPN transistor
|
Solid State Devices Inc
|
| JE93I9HTR5 JE9 JE9112HR1 JE9112HR2 JE9112HR3 JE911 |
Digital Media System-on-Chip (DMSoC) 338-NFBGA 大功率磁保持继电
2.0mV Quad Ultra Micropower Rail-to-Rail CMOS Operational Amplifier, 24L SOIC 大功率磁保持继电
HIGH POWER LATCHING RELAY 大功率磁保持继电
Energy Harvesting Module w/ connector, 1.8V to 3.6V, 4.6mJ, 68msec@25mA
Energy Harvesting Module w/ connector, 3.1V to 5.2V, 55mJ, 88msec@150mA
Energy Harvesting Module w/ connector, 3.1V to 5.2V, 8.3mJ, 80msec@25mA
Energy Harvesting Module w/ connector, 1.8V to 3.6V, 30mJ, 75msec@150mA
SOIC socket added to Adapter Module
|
Hongfa Relay
???瀹???靛０?′唤??????
Xiamen Hongfa Electroacoustic Co., Ltd.
厦门宏发电声股份有限公司
HONGFA[Hongfa Technology]
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| BYX134GPL |
HIGH VOLTAGE AUTOMOTIVE IGNITION DIODE
|
EIC discrete Semiconductors
|
| BU920 BU920P BU920PFI BU920T BU921 BU921P BU921PFI |
NPN power transistor for automotive ignition applications, 450V, 10A
HIGH VOLTAGE POWER DISSIPATION 高压功率消
NPN power transistor for automotive ignition applications, 400V, 10A
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| VB927 VB927FI |
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
