| PART |
Description |
Maker |
| SL1222101-A SL1222101-B |
TRANS,WALL,24VDC/400mA,F2, 2.1mm x 5.5mm,UL 50/cs 电路保护热敏电阻
TRANS,WALL,24VDC/500mA,F1 2.1mmX5.5mm,UL
TRANS,WALL,18VDC/1A,F2,2.5X5.5 ,2 PRNG AC,LIN NON-REG
|
Ametherm, Inc.
|
| WP-MK-X2011-868 RS-MK-X2010 WP-MK-X2010-434 WP-MK- |
MOSFET DUAL N-CHAN 20V SOT-26
TRANS NPN BIPOLAR 300MW SOT26
TRANS PNP BIPOLAR 300MW SOT26
TRANSISTOR NPN 40V SOT363
High Integrity FM Transceiver
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Round Solutions
|
| BDX84A BDX54 BDX54A BDX54B |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS
Trans Darlington PNP 60V 8A 3-Pin(3 Tab) TO-220
|
New Jersey Semi-Conductor P...
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
| V53C104P-70 V53C104P-70L V53C104P-12 V53C104P-12L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
TRANS NPN DARL 100V 8A TO022FP
|
Mosel Vitelic, Corp.
|
| PV15-24S PV15-15S PV15-5S PV15-48S |
TRANS,WALL,9VDC/200mA,F1 2.1mm X 55mm,UL/CSA(CTR-NEG)
TRANS,WALL,REG,6VDC/1A 2.1mmX5.5mm,CTR POS,UL/CSA
TRANS,WALL,9VDC/200mA, M2,3.5mm,UL/CSA
TRANS,WALL,9VDC/300mA,F2, 2.5mmX5.5mm,UL/ULC
TRANS,WALL,9VDC/300mA,F2 2.1mm X 5.5mm,UL/CSA
|
Astrodyne, Inc.
|
| E13003 |
POWER TRANS ISTOR
|
ETC[ETC]
|
| SL1010003 SL1010003-B |
TRANS,WALL,9VDC/800mA,F2 2.1mm x 5.5mm,UL/CUL
TRANS,WALL,REG LIN,9VDC/500mA 2.1mmX5.5mm,CTR POS,UL/CSA
|
Ametherm, Inc
|
| SL1050002 SL1050002-B |
TRANS,WALL,16VDC/500mA,F2 2.1mmX5.5mm,UL,CSA
TRANS,WALL,REG,5VDC/600mA, F1,2.1X5.5mm,UL/CSA,(4850)
|
Ametherm, Inc
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| BLS2731-110 BLS2731110T |
TRANS GP BJT NPN 75V 3SOT-423A
Microwave power transistor
|
Philips Semiconductors / NXP Semiconductors
|
| 2SD1641 |
SILICON PNP TRIPLE DIFFUSED PLANAR TYPE HIGH DC CURRNT GAIN,HIGH POWER AMPLIFIER TV POWER SOURCE OUTPUT
|
PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
|
|
