| PART |
Description |
Maker |
| ACS709LLFTR-20BB-T ACS709LLFTR-35BB-T ACS709 |
High Bandwidth, Fast Fault Response Current Sensor IC In Thermally Enhanced Package
|
Allegro MicroSystems
|
| NPT25015 NPT25015-15 |
Gallium Nitride 28V, 23W RF Power Transistor
Thermally-enhanced industry standard package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| ACS709V |
High Bandwidth, Fast Fault Response Current Sensor IC In Thermally Enhanced Package
High Bandwidth, Fast Fault Response Current Sensor IC In Thermally Enhanced Package
|
Allegro MicroSystems
|
| PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
| PTFA091201E PTFA091201EV4R0 PTFA091201EV4R250 PTFA |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| PXAC192908FV PXAC192908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| ISPLSI8840V-125LB272 ISPLSI8840V-90LB272 ISPLSI884 |
EE PLD, 24 ns, PBGA272 THERMALLY ENHANCED, BGA-272
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| PTFA181001F |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| PTVA047002EV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTVA127002EV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA241301E PTFA241301F PTFA241301FV1 |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 ?2480 MHz
|
Infineon Technologies AG
Infineon Technologies A...
|
| PTFA081501E PTFA081501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz
|
Infineon Technologies AG
|
