| PART |
Description |
Maker |
| TZ150N22KOF TZ150N18KOF TZ150N24KOF TZ150N26KOC |
High junction temperature Transil 晶闸管模块|可控硅| 2.2KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 1.8KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.4KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.6KV五（无线资源管理）| 223A我（翻译
|
Infineon Technologies AG
|
| SSTS20U60P5 |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD10L200CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBD10L100CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SMA6J6.0A-TR SMA6J6.0CA-TR SMA6J6.5A-TR SMA6J6.5CA |
High junction temperature Transil
|
ST Microelectronics
|
| TN4015H-6I |
High junction temperature : Tj=150?
|
STMicroelectronics
|
| SJXX12RXTP |
This SJxx12xx high junction temperature SCR series is ideal for uni-directional switch applications such as phase control in heating, motor speed controls
|
Littelfuse
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| MBR10H150CT MBRF10H150CT MBRB10H150CT-1 |
Dual High-Voltage Schottky Rectifiers, Forward Current 10A, Reverse Voltage 150V, Max. Junction Temperature 175C
Diodes
|
VISAY[Vishay Siliconix]
|
| BCR12CM-12LB BCR12CM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
| BCR30AM-12LB BCR30AM-12LB-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150隆?C)
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
