| PART |
Description |
Maker |
| SBF13007 |
36W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces
|
SemiWell Semiconductor
|
| S13003AD |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| S13003 |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| JANSM2N3439 JANSM2N3439L |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| MMBT2132T306 MMBT2132T3G MMBT2132T3 |
General Purpose Transistors NPN Bipolar Junction Transistor
|
ONSEMI[ON Semiconductor]
|
| IRPLDIM2E |
Digital Dimming DALI Ballast for 36W/T8 220V input
|
International Rectifier
|
| 5KP170 5KP170A |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| SBW13009 |
130W Bipolar Junction Transistor, 12A Ic, 400V Vceo, 700V Vces
High Voltage Fast-Switching NPN Power Transistor
|
SEMIWELL[SemiWell Semiconductor]
|
| EC3A01H |
N-Channel Silicon Junction FET - Electret Condenser Microphone Applications
Junction FETs
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| SKBPC3510 SKBPC35005 SBRPC3510 SBRPC35XXX SKBPC35X |
(SKBPC35005 - SKBPC3510) Diffused Junction
(SBRPC35005 - SBRPC3510) Diffused Junction
|
Yangzhou Yangjie Electronics
|
