| PART |
Description |
Maker |
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| MGW12N120 |
Insulated Gate Bipolar Transistor N-Channel
Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
|
ONSEMI[ON Semiconductor]
|
| MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW21N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP15N60U-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MMG05N60D_D ON2233 MMG05N60D |
Insulated Gate Bipolar Transistor
From old datasheet system
N-hannel Enhancement-ode Silicon Gate
|
ONSEMI[ON Semiconductor]
|
| MGS05N60D |
Insulated Gate Bipolar Transistor
|
MOTOROLA[Motorola, Inc]
|
| MGP21N60E |
Insulated Gate Bipolar Transistor
|
MOTOROLA[Motorola, Inc]
|
| IRG4BC40UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
