| PART |
Description |
Maker |
| SFF80N10Z |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET 55 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Solid State Devices, Inc.
|
| SFRC9130S.5B |
10 AMP /100 Volts 300 mRadiation Tolerant P-Channel MOSFET 10 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| FDT86113LZ |
100V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m
N-Channel PowerTrench? MOSFET 100 V, 3.3 A, 100 m
|
Fairchild Semiconductor
|
| SI4482DY SI4482DY-T1 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
N-Channel 100-V (D-S) MOSFET
N-Channel, 100-V Single
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| PPF150M |
N Channel MOSFET; Package: TO-254; ID (A): 21; RDS(on) (Ohms): 0.053; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 34 A, 100 V, 0.053 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF75N10N |
N Channel MOSFET; Package: TO-258; ID (A): 50; RDS(on) (Ohms): 0.025; PD (W): 300; BVDSS (V): 100; Rq: 0.42; 50 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
|
Microsemi, Corp.
|
| IPB05CN10NG |
100 A, 100 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
INFINEON TECHNOLOGIES AG
|
| NTB6410ANT4G NTP6410AN NTP6410ANG NTB6410ANG |
N-Channel Power MOSFET 100 V, 76 A, 13 mΩ
76 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
ON Semiconductor
|
| FDP085N10A-F102 FDP085N10AF102 FDP085N10A |
N-Channel PowerTrenchMOSFET 100V, 96A, 8.5m
N-Channel PowerTrench? MOSFET 100 V, 96 A, 8.5 mΩ
|
Fairchild Semiconductor
|
| 2SK1337 2SK1337TZ-E |
300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
Silicon N Channel MOS FET
|
Renesas Electronics Corporation
|
| FMP76-01T |
62 A, 100 V, 0.011 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET PLASTIC, ISOPLUS, I4PAK-5
|
IXYS, Corp.
|
|
