| PART |
Description |
Maker |
| 2SC5245A |
RF Transistor, 10V, 30mA, fT=8GHz, NPN Single MCP
|
ON Semiconductor
|
| ZXTR2008Z |
100V INPUT, 8V 30mA REGULATOR TRANSISTOR
|
Diodes Incorporated
|
| ZXTR2012Z ZXTR2012Z-7 |
100V INPUT, 12V 30mA REGULATOR TRANSISTOR
|
Diodes Incorporated
|
| P8-SC-111 P8-PC-111 P8-20P-C QR_P8-20P-C QR_P8-20P |
Ultra-small Rectangular Multi-electrode solderless Connectors for Rack and Panel Applications
CAP CER 56PF 50V C0G 5% 0402
CAP CER 1500PF 10V SL 5% 0402
CAP CER 1800PF 10V SL 5% 0402
CAP CER 2200PF 10V SL 5% 0402
CAP CER 2700PF 10V SL 5% 0402
CAP CER 3300PF 10V SL 5% 0402
CAP CER 47PF 50V C0G 5% 0402
CAP CER 39PF 50V C0G 5% 0402
CAP CER 3900PF 10V SL 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
CAP CER 68PF 50V C0G 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
CAP CER 33PF 50V C0G 5% 0402 超小型矩形多电极焊机架和面板连接器的应用
|
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
HIROSE ELECTRIC Co., Ltd.
|
| 2SC4633LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications
1200V/30mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| IRG4BC10S IRG4BC10SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极晶体管IGBT的标准速度VCES和\u003d 600V电压的Vce（on）typ.1.10V @和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| 2SC5501A 2SC5501A-4-TR-E |
RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4
|
ON Semiconductor
|
| 2N2979DCSM |
TRANSISTOR | BJT | PAIR | NPN | 60V V(BR)CEO | 30MA I(C) | LLCC
Dual Bipolar NPN Devices in a hermetically sealed
|
Seme LAB
|
| EN1719 |
Bipolar Transistor, 10V, 3A, Low VCE(sat), NPN Single PCP
|
ON Semiconductor
|
