| PART |
Description |
Maker |
| DB300S DB300R DB300A SIDAC DB120A DB120R DB120S DB |
Bilateral Voltage triggered Switch
Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts
Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts c
|
Jinan Jingheng (Group) ...
Jinan Jing Heng Electro...
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| IXFV26N60P IXFV26N60PS |
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated 26 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| 1N4933G2 1N4935 1N4935G-T 1N4936G-T 1N4933G-T 1N49 |
1.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers
|
Diodes Incorporated
|
| SF20AG-T SF20JG-T SF20AG SF20AG_1 SF20BG-T SF20CG- |
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers
2.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
|
DIODES[Diodes Incorporated]
|
| SD203R25S20PV SD203N SD203N04S10MBC SD203N04S10MBV |
1200V Fast Recovery Diode in a DO-205AB (DO-9) package
2500V Fast Recovery Diode in a DO-205AB (DO-9) package
1600V Fast Recovery Diode in a DO-205AB (DO-9) package
XSTR FET-N DEPL 500V 1K TO243
SEMICONDUCTOR DEVICE, TRANSISTOR, P-CHANNEL MOSFET (SOT-89)
XSTR M N 100V 1.5R 3.0A
,IC, HIGH VOLT EL DRIVER, SO-8
DIODE SCHOTTKY 40V/1A SS14 SMA 快速恢复二极管螺柱版本
TRANSISTOR, DN2540 N-FET S 快速恢复二极管螺柱版本
FAST RECOVERY DIODES Stud Version 快速恢复二极管螺柱版本
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IXTQ22N50P IXTH22N50P IXTV22N50P IXTV22N50PS |
MOSFET N-CH 500V 22A TO-3P 22 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS, Corp.
IXYS Corporation
|
| STB6NA60 4232 STB6NA60-1 |
82V, 1.5KW TRANZORB, 1.5 KE82A, IN6293A
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STGW30NC60WD STGW30NC60WD07 GW30NC60WD |
STGW30NC60WD
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH?/a> IGBT
N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH垄芒 IGBT
|
STMicroelectronics
|
| SI7840DP SI7840DP-E3 |
11 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel 30-V (D-S) Fast Switching MOSFET
|
Vishay Siliconix
|
