| PART |
Description |
Maker |
| DESD2CAN2SOQ DESD2CAN2SOQ-7 |
CAN BUS ESD PROTECTION DIODE
|
Diodes Incorporated
|
| CPDU24V0U-HF |
Halogen Free ESD Diodes, V-C=50V, V-ESD=15kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDUR9V0LP-HF |
Halogen Free ESD Diodes, V-C=16V, V-ESD=8kV
Low Capacitance ESD SMD Protection Diode
|
Comchip Technology
|
| CPDFR12V-HF CPDFR12V0-HF CPDFR24V0-HF CPDFR5V0-HF |
Halogen Free ESD Diodes, V-C=15V, V-ESD=8kV
Halogen Free ESD Diodes, V-C=47V, V-ESD=8kV
Halogen Free ESD Diodes, V-C=25V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDQR2V5U-HF CPDQR2V5U-HF-15 |
SMD ESD Protection Diode
Halogen Free ESD Diodes, V-C=7V, V-ESD=30kV
|
Comchip Technology
|
| TC7SG126FU |
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 20.9 to 23.3; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD 总线缓冲器具有三态输
Bus Buffer with 3-STATE Output
|
Toshiba, Corp.
Toshiba Semiconductor
|
| 74F1071MSAX |
18-Bit Undershoot/Overshoot Clamp and ESD Protection Device; Package: SSOP; No of Pins: 20; Container: Tape & Reel 18-LINE DIODE BUS TERMINATION ARRAY, PDSO20
|
Fairchild Semiconductor, Corp.
|
| DF2S6.8S |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 11.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.8FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A3.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
