PART |
Description |
Maker |
CPDURT5V0C-HF |
Halogen Free ESD Diodes, V-C=14.5V, V-ESD=8kV Low Profile SMD ESD Protection Diode
|
Comchip Technology
|
CPDF12V0U-HF |
Halogen Free ESD Diodes, V-C=24V, V-ESD=30kV SMD ESD Protection Diode
|
Comchip Technology
|
CPDER24V0U-HF |
Halogen Free ESD Diodes, V-C=50V, V-ESD=8kV SMD ESD Protection Diode
|
Comchip Technology
|
CPDTR055V0C-HF |
Halogen Free ESD Array, V-C=5V, V-PV=8kV, V-BD=6.1V SMD ESD Protection Diode
|
Comchip Technology
|
CPDVR085V0UA |
ESD Suppressor Array, V-C=9.8V, V-PV=15kV, V-BD=6V SMD ESD Protection Diode
|
Comchip Technology
|
DF2S12S DF3A6.2FE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.15 to 9.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
DF3A6.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
DF3A3.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
DF2S5.6S |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|