| PART |
Description |
Maker |
| HMT351S6AFR8C-G7 HMT351S6AFR8C-H9 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| M470T6554CZ0-CCC M470T6554CZ0-CD5 M470T6554CZ0-CE6 |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
PATCHCORD SQ SCKT-ALLIG CLIP RED
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| V82658B04S |
64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V43648Y04VCTG-75 |
3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SODIMM
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| UG42W6414GSG UG42W6446GSG UG42W6416GSG |
16M BYTES (2M X 64 BITS) EDO MODE UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers
http://
ETC[ETC]
|
| V826632B24S |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64
|
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V826516G04S |
128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V43644Y04VCTG-10PC V43644Y04VTG-10PC |
3.3 VOLT 4M x 64 HIGH PERFORMANCE 100 MHZ SDRAM UNBUFFERED SODIMM
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| VL-MM9-2EBN |
2GB 256Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN
|
List of Unclassifed Manufacturers
|
| V436616Y24VATG-75PC |
3.3 VOLT 16M x 64 HIGH PERFORMANCE 133 MHZ SDRAM UNBUFFERED SODIMM 3.36米x 64高性能133 MHz的内存缓冲的SODIMM
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
