| PART |
Description |
Maker |
| HYE25L128160AC-8 HYB25L128160AC-75 |
128-MBIT SYNCHRONOUS LOW-POWER DRAM IN CHIPSIZE PACKAGES 128 - Mbit同步低功率DRAMCHIPSIZE套票
|
Infineon Technologies A...
Infineon Technologies AG
|
| M48T128Y-70PM1 M48T128Y-80PM1 M48T128V-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kb x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 1 Mbit (128 Kb x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| AT52SQ1283J |
128-Mbit Flash 32-Mbit PSRAM Stack Memory.
|
Atmel
|
| M48Z128Y-70PM1 M48Z128Y-120PM1 M48Z128Y-85PM1 M48Z |
5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER庐 SRAM
5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics
|
| NP5Q128A13ESFC0E NP5Q128AE3ESFC0E |
128-Mbit, Quad/Dual/Single Serial Interface, 128-Kbyte Sectors Phase Change Memory (PCM) with 66MHz SPI Bus Interface
|
Numonyx B.V
|
| M36L0R7060T1 M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
STMicroelectronics
ST Microelectronics, Inc.
|
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
意法半导
STMicroelectronics
ST Microelectronics
|
| M36W0R7050B0 M36W0R7050B0ZAQ M36W0R7050T0 M36W0R70 |
SPECIALTY MEMORY CIRCUIT, PBGA88
128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package
|
STMICROELECTRONICS
ST Microelectronics
|
| IDT72V8988 IDT72V8988DB IDT72V8988J IDT72V8988J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology
IDT
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
