| PART |
Description |
Maker |
| 2SK2798 |
VX-2 Series Power MOSFET(350V 6A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| 2N6760 |
N-Channel Power MOSFETs/ 5.5A/ 350V/400V
N-Channel Power MOSFETs, 5.5A, 350V/400V
|
Fairchild Semiconductor
|
| 2N6767 2N6768 |
N-Channel Power MOSFETs/ 15A/ 350V/400V
N-Channel Power MOSFETs 15A 350V/400V
N-Channel Power MOSFETs, 15A, 350V/400V
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF323 IRF320 |
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRFIBC30G IRFIBC30 |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A)
|
IRF[International Rectifier]
|
| IRFB9N60 IRFB9N60APBF |
Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
| APT35M80AFN |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 350V V(BR)DSS | 58A I(D) 晶体管| MOSFET功率模块|独立| 350V五（巴西）直| 58A条（丁）
|
Rubycon, Corp.
|
| HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB
XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| CAT1026UE-30TE13 CAT1026UE-42TE13 CAT1027PE-42TE13 |
AC Solid State Switch using optical coupling
AC Solid State Switch utilizing dual power SCR outputs
SWITCH PRESSURE N.C. 10PSI
GAS SURGE ARRESTOR
SWITCH PRESSURE N.C. 4PSI
XTAL CER SMT 11X5 4PAD
OSC 3.3V SMT 14X9 CMOS
SWITCH PRESSURE D.C. 4PSI
OSC 3.3V SMT 7X5 CMOS
IGBT Modules up to 3300V Diodes; Package: A-IHM130-1; IF (typ): 800.0 A; Configuration: Diode Modules; Technology: IGBT2 Standard; Housing: IHV 130 mm; Features: -;
SCR / Diode Modules up to 1400V SCR / Diode Fast
MLT Series Linear Position Transducer, 12,7 mm [0.5 in] Electrical Travel, 1.0 % Linearity, Item Number F38000100
Oscillator; Oscillator Type:SPXO; Frequency:80MHz; Frequency Tolerance: /- 50 ppm; Load Capacitance:15pF; Crystal Terminals:PCB Surface Mount; Supply Voltage:3.3V; Mounting Type:Surface Mount
350V, 120mA, 35 1-Form-B relay with an optocoupler
Modular Connector; Features:Category 6 specifications
COILTRONICS RoHS Compliant: Yes
350V, 120mA, 20, 1-Form-A relay with an optocoupler for telecom
RELAY OPTO TELCOM 120MA 8 FLT PK
RES,1206,5%,1/8W,330 OHM
350V, 120mA, 35 1-Form-A current limiting relay with an optocoupler for telecom
350V, 120mA, 35 1-Form-A relay with an optocoupler for telecom
Dual Voltage Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM 双电压监控电路，带有I2C串行K位CMOS EEPROM
2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
2-CHANNEL POWER SUPPLY SUPPORT CKT, DSO8
|
Catalyst Semiconductor
http://
BCD Semiconductor Manufacturing, Ltd.
TE Connectivity, Ltd.
ITT, Corp.
Glenair, Inc.
ON SEMICONDUCTOR
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
