| PART |
Description |
Maker |
| ZX60-M-SERIES ZX60-2510M ZX60-2514M ZX60-2522M ZX6 |
High Isolation Amplifiers 50з, 0.5 to 5.9 GHz 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
High Isolation Amplifiers 50? 0.5 to 5.9 GHz
From old datasheet system
High Isolation Amplifiers 50/ 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
| STB7102 STB7102TR 102 |
0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS
0.5/2.5 GHz UHF LO BUFFER AMPLIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| TA020-040-42-38 |
2.0 ?4.0 GHz 38dBm Amplifiers
|
Transcom, Inc.
|
| TA020-060-40-33 |
2.0 ?6.0 GHz 33dBm Amplifiers
|
Transcom, Inc.
|
| TA020-060-40-35 |
2.0 . 6.0 GHz 35dBm Amplifiers
|
Transcom, Inc.
|
| STB7102 |
0.5/2.5 GHz LO MMIC BUFFER AMPLIFIERS
|
ST Microelectronics
|
| DG03-166 |
MONOLITHIC AMPLIFIERS 50?BROADBAND DC to 8 GHz
|
Mini-Circuits
|
| TA060-120-15-27 |
6.0 ?12.0 GHz 17dB Gain 27dBm Amplifiers
|
Transcom, Inc.
|
| NE552R479A NE552R479A-T1 NE552R479A-T1-A NE552R479 |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
California Eastern Labs
|
| BFQ75 Q62702-F803 |
PNP SILICON RF TRANSISTOR (FOR BROADBAND AMPLIFIERS UP TO 2 GHZ AT COLLECTOR CURRENTS FROM 5 MA TO 30 MA.)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F659 BFQ29 BFQ29P |
From old datasheet system
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz
|
Infineon
|
