| PART |
Description |
Maker |
| BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| RA03M3540MD RA03M3540MD-101 |
RF MOSFET MODULE 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
http://
Mitsubishi Electric Semiconductor
|
| RA03M4043MD RA03M4043MD-101 |
RF MOSFET MODULE 400-430MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
http://
Mitsubishi Electric Semiconductor
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| TA020-060-40-30 |
2.0 ?6.0 GHz 30dBm Amplifiers
|
Transcom, Inc.
|
| TA020-040-37-35 |
2.0 ?4.0 GHz 36dBm Amplifiers
|
Transcom, Inc.
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| CFH77 Q62702-G117 |
GaAs HEMT For low noise front end amplifiers up to 20 GHz
|
INFINEON[Infineon Technologies AG]
|
| HMC552LP4 HMC552LP4E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.6 - 3.0 GHz
Analog & Mixed-Signal Processing -> Amplifiers
|
Hittite Microwave Corporation
|
| Q62702-F775 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)
|
SIEMENS AG
|
| Q62702-F659 BFQ29 BFQ29P |
From old datasheet system
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
