| PART |
Description |
Maker |
| BFS17P BFS18P. |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| MNA-7 MNA-SERIES MNA-2 MNA-3 MNA-4 MNA-5 MNA-6 |
Monolithic Amplifiers High Directivity, 50? 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity 50 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity, 50з, 0.5 to 5.9 GHz
Monolithic Amplifiers High Directivity, 50, 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
| MERA-556 |
Surface Mount Dual Matched MMIC Amplifiers 50 High Dynamic Range DC to 2.2 GHz
Surface Mount Dual Matched MMIC Amplifiers 50з High Dynamic Range DC to 2.2 GHz
|
MINI[Mini-Circuits]
|
| ERA-5XSM |
Monolithic Amplifier 50OHM, Broadband, DC to 4 GHz
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz
|
MINI[Mini-Circuits]
|
| AD8353 AD8353ACP-REEL7 AD8353-EVAL AD8353ACP-R2 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
AD[Analog Devices]
|
| AD8354ACP-R2 AD8354-EVAL AD8354ACP-REEL7 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
|
| CFH77 Q62702-G117 |
GaAs HEMT For low noise front end amplifiers up to 20 GHz
|
INFINEON[Infineon Technologies AG]
|
| Q62702-F788 A0536 BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications)
From old datasheet system
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range and broadband analog and digital applications)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz
8485D Diode Power Sensor, 50 MHz to 26.5 GHz
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz
R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz
R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz
E4412A Wide Dynamic Range Power Sensor, E-Series
E4413A Wide Dynamic Range Power Sensor, E-Series
V8486A V-band Power Sensor, 50 GHz to 75 GHz
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W
8487A Power Sensor, 50 MHz to 50 GHz
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W
8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| BFQ71 Q62702-F775 A0534 |
From old datasheet system
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F1347 BFP194 |
From old datasheet system
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents)
|
SIEMENS[Siemens Semiconductor Group]
|
| BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
