| PART |
Description |
Maker |
| CFD811 |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| BF469 |
2.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.030A Ic, 50 hFE. Complementary BF470
TRANSISTOR|BJT|NPN|250VV(BR)CEO|100MAI(C)|TO-126
|
Continental Device India Limited
|
| SJE1349 |
65.000W Switching NPN Plastic Leaded Transistor. 63V Vceo, 6.000A Ic, 43 hFE.
|
Continental Device India Limited
|
| CSC2562Y |
25.000W Switching NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
| CDD1933 |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 1000 - 10000 hFE.
|
Continental Device India Limited
|
| CDD2061D CDD2061 |
2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE.
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Continental Device India Limited
|
| BF822 BF820_822_3 BF820 BF820/T1 |
NPN high voltage transistors
TRANSISTOR HIGH VOLTAGE
NPN high-voltage transistors
From old datasheet system
|
Philips Semiconductors
NXP Semiconductors
|
| CXTA44 |
SMD Small Signal Transistor NPN High Voltage
SURFACE MOUNT NPN SILICON HIGH VOLTAGE TRANSISTOR
|
Central Semiconductor Corp
|
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| 2SC5077 2SC5077A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
