| PART |
Description |
Maker |
| AP2121N-3.0TRE1 AP2121N-3.3TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
http://
|
| AP2129K-1.0TRG1 AP2129K-1.2TRG1 AP2129K-3.3TRG1 AP |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| AP2127DN-4.75TRG1 AP2127K-4.75TRG1 AP2127R-4.75TRG |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
Diodes
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| CES2303 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2313A |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2314 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
