| PART |
Description |
Maker |
| D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET 金属门射频硅场效应管
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
| 2SK2938 |
Silicon N Channel MOS FET(N娌??MOSFET)
Silicon N Channel MOS FET(N沟道MOSFET) 通道场效应晶体管（不适用沟道MOSFET的）
From old datasheet system
|
Hitachi,Ltd.
|
| 2SJ483 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SK3230B |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
N-CHANNEL SILICON J-FET
|
NEC
|
| 2SK3717 |
N-channel Silicon J-FET
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC
|
| 2SJ215 |
Silicon P-Channel MOS FET(P沟道MOSFET)
Silicon P-Channel MOS FET(P娌??MOSFET)
|
Hitachi,Ltd.
|
| 3SK290 |
Silicon N Channel MOS FET
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
