| PART |
Description |
Maker |
| PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
| SSM3K05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHALLEL MOS TYPE
|
Toshiba Semiconductor
|
| PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOSField Effect Transistor 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
| SSM3K02F |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 东芝场效应晶体管频道马鞍山类 Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Corporation Toshiba, Corp. Toshiba Semiconductor
|
| 2SK3403NBSP 2SK3403 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| 2SK3314 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)
|
TOSHIBA[Toshiba Semiconductor]
|
| HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
| 2SK3236 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) From old datasheet system Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
|
Toshiba Semiconductor Hitachi Semiconductor
|
| STS2306 |
N-Channel Enhancement Mode Field Effect Transistor N-Channel E nhancement Mode Field Effect Transistor
|
SamHop Microelectronics Corp.
|
| TPCS8211 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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