| PART |
Description |
Maker |
| LAPD-1-09-17-TO46 |
InGaAs Large Area Photo-Detector
|
Roithner LaserTechnik G...
|
| ETX500T |
Large-area InGaAs Photodiodes
|
JDS Uniphase Corporatio...
JDS Uniphase Corporation
|
| R591210 R7081-20 R8055 R5912-02 R3600-02 |
LARGE PHOTOCATHODE AREA PHOTOMULTIPLIER TUBES
|
Hamamatsu Corporation
|
| S6337-01 |
Large area photodiode for UV to IR, precision photometry
|
Hamamatsu Corporation
|
| EL7900ILCZ-T7 EL790007 EL7900ILCZ EL7900 |
Ambient Light Photo Detect IC
|
INTERSIL[Intersil Corporation]
|
| PD300-003-3XX PD300-003-0XX PD300-003-5XX PD300-00 |
300レm InGaAs Photodiode 300レ米铟镓砷光电二极管
300レm InGaAs Photodiode PHOTO DIODE
|
ANADIGICS, Inc.
|
| S11499-01 |
Large area, enhanced near IR sensitivity, using a MEMS technology
|
Hamamatsu Corporation
|
| PD839C4 |
InGaAs AVALANCHE PHOTO DIODES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PD8XX3 PD8933 |
InGaAs AVALANCHE PHOTO DIODES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SD630-70-74-500 |
Non-Cooled Large Area Blue Silicon Avalanche Photodiode
|
Advanced Photonix, Inc.
|
| S3590-08 S3590-09 |
Si PIN photodiode Large area sensors for scintillation detection
|
Hamamatsu Corporation
|
| ISL29101IROZ-EVALZ ISL29101IROZ-T7 ISL29101 |
Small, Low Power, Voltage-Output Ambient Light Photo Detect IC
Small, Low Power, Voltage-Output Ambient Light Photo Detect IC; Temperature Range: -40°C to 85°C; Package: 6-ODFN T&R SPECIALTY ANALOG CIRCUIT, PDSO6
|
Intersil Corporation
Intersil, Corp.
|
