| PART |
Description |
Maker |
| EM48AM1644VBB-6FE EM48AM1644VBB-75FE EM48AM1644VBB |
128Mb (2M×4Bank×16) Synchronous DRAM
128Mb (2M隆驴4Bank隆驴16) Synchronous DRAM
128Mb (2M】4Bank】16) Synchronous DRAM
|
http://
Eorex Corporation
|
| H57V1262GTR-50X H57V1262GTR-60X H57V1262GTR-70X H5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| NT5SV8M16FS NT5SV8M16FT |
128Mb Synchronous DRAM
|
NANYA
|
| EM48BM1644VTC-6FE EM48AM1644VTC-6FE EM488M1644VTC- |
128Mb (2M×4Bank×16) Synchronous DRAM
128Mb (2M】4Bank】16) Synchronous DRAM
|
Eorex Corporation
|
| EM484M3244VTC-75F EM484M3244VTC-6F |
128Mb (1M×4Bank×32) Synchronous DRAM
|
Eorex Corporation
|
| EM488M1644VTE-6F EM488M1644VTE-6FE EM48BM1644VTE-6 |
128Mb (2M×4Bank×16) Synchronous DRAM
128Mb (2M】4Bank】16) Synchronous DRAM
|
Eorex Corporation
|
| KM416S8030BN-G_FL KM416S8030BN KM416S8030BN-G_FH K |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K |
128Mb SDRAM, 3.3V, LVTTL, 100MHz
2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| NT128S64V88C0G-75B NT128S64V88C0G-7K NT128S64V88C0 |
128Mb unbuffered SDRAM module based on 16Mx8, 4banks, 4K refresh, 3.3V synchronous DRAM with SPD
|
NANYA
|
| K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
