| PART |
Description |
Maker |
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HYB39S64160AT HYB39S64160BT HYB39S64160BT-7 |
64M SDRAM Component
4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4× 1M× 16)同步动态RAM（用于高速图形场合）)
4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4M x 16)同步动态RAM（用于高速图形场合）)
|
Infineon
SIEMENS AG
|
| HYB39S64160AT HYB39S64160AT-8B HYB39S64160AT-10 HY |
64 MBit Synchronous DRAM
|
Siemens Semiconductor Group
|
| HYB39S64800AT-10 HYB39S64800AT-8 HYB39S64800AT-8B |
64 MBit Synchronous DRAM
|
SIEMENS[Siemens Semiconductor Group]
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| HYB39SC256160FE-6 HYB39SC256160FE-7 HYB39SC256160F |
256-MBit Synchronous DRAM
|
Qimonda AG
|
| HYB39SC256 HYB39SC256800FF-7 |
256-MBit Synchronous DRAM
|
Qimonda AG
|
| HYI39S128160F |
128-MBit Synchronous DRAM
|
Qimonda
|
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| IS42VS16400C1-12TLI IS42VS16400C1-12TI IS42VS16400 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM 4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
|
Integrated Silicon Solution, Inc.
|
| IS45S32400B-7TLA IS45S32400B-7TLA1 IS45S32400B-6TL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| IS42S32400D-6BLI IS42S32400D-6B-TR IS42S32400D-6TL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
天津新技术产业园区管理委员会
|
