| PART |
Description |
Maker |
| CX28225 CX28224 |
(CX28224 - CX28229) Inverse Multiplexing
|
Mindspeed
|
| IDT82V2604 IDT82V2604BB |
INVERSE MULTIPLEXING FOR ATM IDT82V2604 反向复用的ATM IDT82V2604
4 Channel, T1/E1 Inverse Multiplexing for ATM
Inverse Multiplexing for ATM, 4-Channel
|
Integrated Device Technology, Inc.
IDT
|
| IDT82V2608BB IDT82V2608 |
INVERSE MULTIPLEXING FOR ATM
|
Integrated Device Technology
|
| IDT82V2616 IDT82V2616BB |
INVERSE MULTIPLEXING FOR ATM
|
IDT[Integrated Device Technology]
|
| 7164-50B2TH 7164 |
Inverse DIN 41612 Boardmount Socket
|
3M[3M Electronics]
|
| ZL30410 |
CONN HDR INVERSE 30POS 5ROW VERT
|
Zarlink Semiconductor Inc.
|
| DS33R41 |
Inverse-Multiplexing Ethernet Mapper with Quad Integrated T1/E1/J1 Transceivers
|
Maxim Integrated Products, Inc.
|
| 85056-0115 0850560115 |
2.54mm (.100) Pitch DIN 41612/IEC 603-2 Mixed Layout Connector, Female Style M Inverse, 60 Circuits, Lead free
|
Molex Electronics Ltd.
|
| 0850560012 85056-0012 |
2.54mm (.100) Pitch DIN 41612/IEC 603-2 Mixed Layout Connector, Female Style M Inverse, 24 Circuits, Lead free
|
Molex Electronics Ltd.
|
| 0850170074 |
2.54mm (.100) Pitch DIN 41612/EIC 603-2 Mixed Layout Connector, Male Style M(Hybrid type), Inverse Press-Fit, 0.6μm (24μ) Gold (Au) Selective, 48 Circuits
2.54mm (.100") Pitch DIN 41612/EIC 603-2 Mixed Layout Connector, Male Style M(Hybrid type), Inverse Press-Fit, 0.6楼矛m (24楼矛") Gold (Au) Selective, 48 Circuits
|
Molex Electronics Ltd.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
