Part Number Hot Search : 
1710069 FS5VSJ2 1N718 P4TD0300 4017BD E000599 HC163 CV107
Product Description
Full Text Search

2SC6094-TD-E - Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single PCP

2SC6094-TD-E_8252987.PDF Datasheet


 Full text search : Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single PCP
 Product Description search : Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single PCP


 Related Part Number
PART Description Maker
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 -3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
UTC
ROHM[Rohm]
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
ON Semiconductor
ZT90 BFT35 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-5
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
SEME-LAB[Seme LAB]
2SA2091S 2SA2091STPQ 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)
TE Connectivity, Ltd.
ROHM[Rohm]
2N2979DCSM TRANSISTOR | BJT | PAIR | NPN | 60V V(BR)CEO | 30MA I(C) | LLCC
Dual Bipolar NPN Devices in a hermetically sealed
Seme LAB
OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 8A条一(c)|1
Vicor, Corp.
Marktech Optoelectronics
STRS6707 STR-S6707 STR-S6708 STR-S6709 TRS6707 STR OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电5A,输出功率直20W50V输出,带双极开关晶体管的脱线开关稳压器)
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A,输出功率直20W50V输出,带双极开关晶体管的脱线开关稳压器)
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
Bourns, Inc.
2SD880 2SD880O POWER TRANSISTORS(3A/60V/30W)
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB
POWER TRANSISTORS(3A,60V,30W)
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
TIP2955G Bipolar Power T0218 PNP 15A 60V; Package: SOT-93 (T0-218) 4 LEAD; No of Pins: 3; Container: Rail; Qty per Container: 30 15 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-218
ON Semiconductor
CT90AM-18 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
2SD2115S 2SD2115L TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-252AA
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-251AA 晶体管|晶体管|叩| 60V的五(巴西)总裁| 5A条一(c)|51AA
Intersil, Corp.
 
 Related keyword From Full Text Search System
2SC6094-TD-E データシート 2SC6094-TD-E 应用线路 2SC6094-TD-E Signal 2SC6094-TD-E Module 2SC6094-TD-E vsen gate
2SC6094-TD-E pulse 2SC6094-TD-E Processor 2SC6094-TD-E read 2SC6094-TD-E adc 2SC6094-TD-E Server
 

 

Price & Availability of 2SC6094-TD-E

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.70815086364746