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2SB817C-1E - Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

2SB817C-1E_8255105.PDF Datasheet


 Full text search : Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L
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PART Description Maker
2SB817C-1E ENA0188B Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L
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TRANSISTOR | BJT | PAIR | NPN | 140V V(BR)CEO | 12A I(C) | TO-3VAR
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 140V V(BR)CEO | 12A I(C) | TO-3VAR 晶体管|晶体管|一对|互补| 140伏特五(巴西)总裁| 12A条一(c)|VAR
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)|02
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-92
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TND027MP TRANSISTOR, NPN, TO-3PB; Transistor type:Power General Purpose; Voltage, Vceo:140V; Current, Ic continuous a max:12A; Voltage, Vce sat max:2.5V; hfe, min:60; ft, typ:15MHz; Case style:TO-3PB; Current, Ib:1.5A; Current, Ic av:12A; RoHS Compliant: Yes
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IRG4BC30WPBF INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)最大\u003d 2.70V @和VGE \u003d 15V的,集成电路\u003d 12A条)
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ZXTP2014GTC ZXTP2014G ZXTP2014GTA 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
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ZETEX[Zetex Semiconductors]
ZXTP2014Z ZXTP2014ZTA 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
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2N3442 NPN Silicon Power Transistor(10A,140V(集电极-发射极),117W,硅NPN功率晶体
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CSB817OF 90.000W Power PNP Plastic Leaded Transistor. 140V Vceo, 12.000A Ic, 60 - 120 hFE.
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