| PART |
Description |
Maker |
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
| KSE80001 KSE802 KSE803 KSE800 |
Monolithic Construction With Built-in Base-Emitter Resistors
|
Fairchild Semiconductor
|
| 2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER
|
Unknow
|
| OP750A OP750B OP750C OP750D |
NPN Pho totransistor with Base- Emitter Resistor
|
Optek Technology
|
| TIP122 TIP121 TIP120 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
|
| NTE99 |
Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode
|
NTE[NTE Electronics]
|
| TIP147T |
(TIP145T - TIP147T) Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
Fairchild Semiconductor
|
| MJ10005 |
NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
New Jersey Semi-Conduct...
|
| TIP142 TIP140 TIP141 TIP142TU |
Monolithic Construction With Built In Base- Emitter Shunt Resistors
NPN Epitaxial Silicon Darlington Transistor
|
FAIRCHILD SEMICONDUCTOR CORP
http://
FAIRCHILD[Fairchild Semiconductor]
|
| TIP117F |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| KGEA-BFCAM KGEA-BFCAM-B-0207-G KGEA-BFCAM-B-0207-J |
Emitter Antenna Low Profile 85x13x7mm Housing Plastic Base-Potted and Outside Connector unsealed&sealed
Emitter Antenna Low Profile 85x13x7mm Housing plastic base-potted and outside connector unsealed & sealed
|
PREMO CORPORATION S.L
|
