| PART |
Description |
Maker |
| IXTK120N25 |
High Current MegaMOS FET
|
IXYS Corporation
|
| IXTN61N50 IXTT75N10 IXTH67N10 IXTH75N10 IXTM67N10 |
MegaMOS FET 75 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
High Current Power MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXTH30N50 |
MegaMOS FET 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Discrete MOSFETs: Standard N-channel Types
|
IXYS, Corp.
IXYS Corporation
|
| IXTM12N90 IXTH12N90 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.90Ω的N沟道增强B>MegaMOSFET)
MEGAMOS FET
Discrete MOSFETs: Standard N-channel Types
|
IXYS Corporation
|
| PS7341C-1A PS7341C-1A-A PS7341CL-1A PS7341CL-1A-A |
CURRENT LIMIT TYPE 6-PIN DIP, HIGH ISOLATION VOLTAGE 1-ch Optical Coupled MOS FET
|
NEC
|
| MAX5069DAUE |
10.8 V, high-frequency, current-mode PWM controller with accurate programmable oscillator and dual FET driver
|
MAXIM - Dallas Semiconductor
|
| PS9402-15 |
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT, POWER MOS FET GATE DRIVE, 16-PIN SSOP PHOTOCOUPLER
|
Renesas Electronics Corporation
|
| XR494 XR2002 XR1468 XR-1468 XR1488 XR-1488 XR1488N |
DAA Module, Half Wave Ring Detection, CID 高电压，大电流达林顿晶体管阵
OPTOCOUPLER SGL TRANS-OUT 6-SMD
CAP 2200UF 10V ELECT FK SMD
OPTOCOUPLER SOLID STATE CURRENT SENSOR, 6 PIN SMD SMD
FET N-CHAN RON 10OHM LITELINK
Optocoupler with a single or darlington transistor output
From old datasheet system
High-Voltage, High-Current Darlington Transistor Arrays
|
Exar, Corp.
EXAR[Exar Corporation]
|
| PS7112-1A PS7112L PS7112L-1A PS7112L-1A-E3 PS7112L |
6-PIN DIP, 200 mA CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET 6引脚DIP00毫安的连续负载电1通道光学耦合场效应晶体管
Coaxial Cable; Coaxial RG/U Type:174; Impedance:50ohm; Conductor Size AWG:26; No. Strands x Strand Size:7 x 34; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes
Solid State Relay(固态继电器)
6-PIN DIP / 200 mA CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET
6-PIN DIP 200 mA CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
