| PART |
Description |
Maker |
| MA2C856 |
Band Switching Diodes SILICON, VHF BAND, MIXER DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| BAT15-02V |
SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Schottky Diodes for Mixer Applications
|
INFINEON TECHNOLOGIES AG
|
| GC9943-S12-127A GC9943-S12-129A GC9941-TCC-127B GC |
SILICON, HIGH BARRIER SCHOTTKY, C BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, KU-K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU-K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
MICROSEMI CORP-LOWELL
|
| BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管（低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装）
RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| JDH2S03S |
UHF Band Mixer
|
Toshiba Semiconductor
|
| JDH2S02SC |
UHF Band Mixer
|
Toshiba Semiconductor
|
| JDH2S01T |
UHF Band Mixer
|
Toshiba Semiconductor
|
| 1SS295 |
UHF BAND MIXER APPLICATIONS
|
Guangdong Kexin Industrial Co.,Ltd
|
| C2306TR C2306 |
MMDS / ISM / S-Band Mixer
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MCA1-12G_ MCA1-12G |
Frequency Mixer WIDE BAND
|
MINI[Mini-Circuits]
|
|
