| PART |
Description |
Maker |
| 2SA1730 |
Adoption of FBET , MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SD1623 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SB1121 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., L...
|
| VPH01 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For Extended-Definition TV Projections
|
SANYO[Sanyo Semicon Device]
|
| VTB5041J VTB5040J |
VTB Process Photodiodes 俄罗斯外贸银行的过程光电二极
VTB Process Photo Diodes
|
List of Unclassifed Man...
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Perkin Elmer Optoelectronics
|
| RN4606 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| PE3 SVC6310 |
25-1000 MHz, GaAs foundry service PROCESS PE3
GAAS FOUNDRY SERVICES PROCESS PE3
GaAs Foundry Services PROCESS PE3
|
MA-Com
Tyco Electronics
|
| IRF3205LTRR IRF3205S IRF3205STRR |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
Advanced Process Technology
|
International Rectifier
|
| IRF7101PBF IRF7101TRPBF IRF7101PBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Adavanced Process Technology
|
IRF[International Rectifier]
|
| HN1B04FU HN1B04FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
