| PART |
Description |
Maker |
| RQ3E130BN |
Nch 30V 13A Middle Power MOSFET
|
Rohm
|
| RQ7E110AJTCR |
Nch 30V 11A Middle Power MOSFET
|
ROHM
|
| HP8K22 |
30V Nch Nch Middle Power MOSFET
|
Rohm
|
| RF6E065BN |
Nch 30V 6.5A Middle Power MOSFET
|
Rohm
|
| RQ3E120AT |
Pch -30V -12A Middle Power MOSFET
|
ROHM
|
| QS8J4FRA QS8J4FRATR |
-30V Pch Pch Middle Power MOSFET
|
ROHM
|
| RTR030N05FRA |
Nch 45V 3A Middle Power MOSFET
|
Rohm
|
| 2SAR542PFRA |
Middle Power Transistor (-30V / -5A)
|
Rohm
|
| 2SAR293P5T100 |
PNP Middle Power Driver Transistor (-30V / -1.0A)
|
ROHM
|
| FS10UM-5 FS10UMA-5A |
Bench Power Supply; No. of Outputs:3; Output Voltage:30V; Output Current:2A; Output Power Max:350W; Calibrated:No; Display Technology:Digital RoHS Compliant: NA 北华捷报OIWER MOSFET
NCH OIWER MOSFET
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| SI4435DY SI4435DYTR |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=-30V Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm
SHROUD, PRIVACY; RoHS Compliant: Yes
|
IRF[International Rectifier]
|
