| PART |
Description |
Maker |
| RJK03N4DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N0DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 30SLJQ045 30SLJQ045-15 |
SCHOTTKY RECTIFIER
30V 45A Hi-Rel Schottky Discrete Diode in a SMD-0.5 package
|
International Rectifier
|
| X9119TV14 X9119TV14-2.7 X9119TV14I X9119TV14I-2.7 |
IGBT MODULE, 1200V, 54A; Transistor type:IGBT4; Current, Ic continuous a max:56A; Voltage, Vce sat max:2.05V; Case style:MiniSkiiP 2 ; Current, Ic continuous b max:45A; Time, rise:35ns; Voltage, Vce sat typ:1.85V; Voltage, RoHS Compliant: Yes
Single Supply/Low Power/1024-Tap/2-Wire Bus
|
INTERSIL[Intersil Corporation]
|
| IRF3703 IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
|
International Rectifier
|
| FDS4080N7 |
RELAY, 4PCO, 12VDC; Configuration, contact:4PCO; Voltage, contact DC max:30V; Voltage, coil DC nom:12V; Current, contact AC max:5A; Current, contact DC max:5A; Voltage, contact AC max:250V; Resistance, coil:160R; Material, RoHS Compliant: Yes
40V N-Channel FLMP PowerTrench MOSFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FMC7G50US60 |
IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| DTB713ZE09 |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB743EE09 |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| IRLU7833PBF IRLR7833PBF |
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 4.5mΩ , Qg = 33nC )
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 4.5mヘ , Qg = 33nC )
|
International Rectifier
|
| FDS3692 |
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
N-Channel PowerTrench?? MOSFET 60V, 45A, 20m???
N-Channel PowerTrench MOSFET 100V, 45A, 60mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
