| PART |
Description |
Maker |
| FDS3672 FDS3672NL |
N-Channel PowerTrench MOSFET 100V/ 7.5A/ 22m
N-Channel PowerTrench MOSFET 100V, 7.5A, 22mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m
N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm
N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDS3672 |
100V, 0.022 Ohms, 7.5A, N-Channel UltraFET ?Trench MOSFET
|
Fairchild Semiconductor
|
| FDD3682 |
N-Channel UltraFET Trench MOSFET 100V, 32A, 36mOhm
|
Fairchild Semiconductor
|
| MDP1922 MDP1922TH |
Single N-channel Trench MOSFET 100V, 97A, 8.4m(ohm)
|
MagnaChip Semiconductor...
|
| FDPF3860T |
100V N-Channel PowerTrench MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
N-Channel PowerTrench㈢ MOSFET 100V, 20A, 38.2mヘ
N-Channel PowerTrench? MOSFET 100V, 20A, 38.2mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FDP047N10 |
N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM
100V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 120 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| FQI44N10 FQB44N10 FQB44N10TM |
100V N-Channel QFET
100V N-Channel MOSFET 43.5 A, 100 V, 0.039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| IRF5Y3710CM |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) 功率MOSFET N沟道（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.035ohm，身份证\u003d 18A
POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.035ohm Id=18A*)
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFG5110 IRFG5110P IRFG5110N IRFG5110-15 |
Simple Drive Requirements
100V, Combination 2N-2P-CHANNEL
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
|
