| PART |
Description |
Maker |
| HM41-11410LF HM41-21015LF HM41-10812LF HM41-12020L |
Toroid Style Gate Drive Transformers PULSE TRANSFORMER FOR GATE DRIVE APPLICATION(S)
|
BI Technologies Corporation
BI Technologies, Corp.
|
| AP9452AGG-HF |
Capable of 2.5V Gate Drive, Single Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP2612GY-HF |
Capable of 1.8V Gate Drive, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| FGC3500AX-120DS |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| FGC800A-130DS |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| GCU40AA-90 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| GCU35AA-120 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| HCPL-J314 HCPL-J314-300 HCPL-J314-500 HCPL-J314-XX |
0.4 Amp Output Current IGBT Gate Drive Optocoupler 0.4安培输出电流IGBT栅极驱动光电耦合
DB25 F/F NULL MODEM ADAPT SCA-
HCPL-J314 · 0.4 Amp Output Current IGBT Gate Drive Optocoupler
|
Ecliptek, Corp.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| AP9452GG08 |
Lower gate charge, Capable of 2.5V gate drive
|
Advanced Power Electronics Corp.
|
| 74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp.
NXP SEMICONDUCTORS
|
| NA82 |
NA82 is an 8-input NAND gate with 2x drive strength.
NA82 is an 8-input NAND gate with 2x drive strength.
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Austria Mikro Systems
|
