| PART |
Description |
Maker |
| FDMC86340 |
80V N-Channel Shielded Gate Power TrenchMOSFET
|
Fairchild Semiconductor
|
| FDMC008N08C |
N-Channel Shielded Gate PowerTrench MOSFET
|
ON Semiconductor
|
| MGP14N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MGP11N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| 558-1192 558-1192-09-00-00 558-1192-11-00-00 558-1 |
Variable Coil, Shielded, Vertical, .080μH thru 1.20mΗ
SHIELDED, 1.8 uH - 2.7 uH, VARIABLE INDUCTOR
SHIELDED, 3.9 uH - 5.6 uH, VARIABLE INDUCTOR
SHIELDED, 0.39 uH - 0.56 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components
WEARNES CAMBION LTD
|
| STL28NF3LL |
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLATLOW GATE CHARGE STripFETMOSFET
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT LOW GATE CHARGE STripFET MOSFET
N-CHANNEL 30V - 0.0055ohm - 28A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 165-05A06S 164-04A06 165-04A06S |
NOT RoHS. RF inductor, tunable, aluminum core, shielded (add 'L' for compliant version) SHIELDED, 0.043 uH - 0.05 uH, VARIABLE INDUCTOR
UNSHIELDED, 0.052 uH - 0.077 uH, VARIABLE INDUCTOR
SHIELDED, 0.035 uH - 0.041 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc.
COILCRAFT INC
|
