| PART |
Description |
Maker |
| CHA6358-99F00 |
GaAs Monolithic Microwave IC
|
United Monolithic Semiconductors
|
| CHC3014 |
X-band RX-TX Core Chip GaAs Monolithic Microwave IC
|
United Monolithic Semiconductors
|
| Q68000-A8615 CGY52 |
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) 砷化镓微波单片集成电路（两个阶段单片微波IC MMICAmplifier所有黄金metallisation
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NGA-589 |
MICROWAVE/MILLIMETERWAVEAMPLIFIER|GAAS|TO-243|3PIN|PLASTIC
DC-5.5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
|
Electronic Theatre Controls, Inc.
Sirenza Microdevices, Inc.
|
| TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| TIM7785-16UL |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
| S8836A |
MICROWAVE POWER GaAS FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM7785-8UL |
MICROWAVE POWER GaAs FET
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TIM7785-60SL |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
| TIM7785-30SL |
MICROWAVE POWER GaAs FET
|
TOSHIBA[Toshiba Semiconductor]
|
