| PART |
Description |
Maker |
| KTC3875 |
0.15A , 60V NPN Plastic Encapsulated Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| 2N7002T |
SOT-523 Plastic-Encaps u late MOSFET
|
Jiangsu High diode Semi...
|
| 2SC5001F5 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-252 晶体管|晶体管|叩| 60V的五（巴西）总裁|5A一（c）|52
|
Rohm Co., Ltd.
|
| CFD2375P CFD2375Q |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 800 - 1500 hFE.
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1000 hFE.
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 500 - 1500 hFE.
|
Continental Device India Limited
|
| RFD15P06 RFD15P06SM FN3988 RFP15P06 |
From old datasheet system
15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs
15A/ 60V/ 0.150 Ohm/ P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| 2SA1292 |
60V/15A High-Speed Switching Applications
|
Sanyo Semicon Device
|
| 2SC3256 |
60V/15A High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| UMT1N |
-0.15A , -60V Dual PNP General Purpose Transistors
|
SeCoS Halbleitertechnologie GmbH
|
| SBT150-06J |
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 15A Rectifier
|
Sanyo Semicon Device
|
| 2SD313 2SD313D |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
POWER TRANSISTORS(3A/60V/30W)
POWER TRANSISTORS(3A,60V,30W)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| 2SC1008Y 2SC1730O 2SC1008G 2SC17300Y |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | TO-92 晶体管|晶体管|叩| 15V的五（巴西）总裁|2
plastic package transistors 塑料封装晶体
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
NEC, Corp.
Microsemi, Corp.
|
