| PART |
Description |
Maker |
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 2SD2459 |
High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
| 2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
| PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
| KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current
PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SB1073 |
Low collector-emitter saturation voltage VCE(sat) Large peak collector current ICP
|
TY Semiconductor Co., Ltd
|
| DN200 |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| BCV61C BCV61A |
High current gain Low collector-emitter saturation voltage
|
TY Semiconductor Co., L...
|
| SMBT390608 MMBT3906 SMBT3906S SMBT3906U |
High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage
|
Infineon Technologies AG
|
| 2SA1729 |
Adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage.
|
TY Semiconductor Co., Ltd
|
