| PART |
Description |
Maker |
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| RJK0652DPB RJK0652DPB-00-J5 RJK0652DPB-13 |
60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| 2SK1297 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 40A条（丁）|47VAR
|
Hitachi,Ltd.
|
| FAN1117AD285X FAN1117AT33X FAN1117AS285X |
FETs - Nch 60VFETs - Nch 150VFETs - Nch 150V2.85 V FIXED POSITIVE LDO REGULATOR, 1.2 V DROPOUT, PSSO2
|
FAIRCHILD SEMICONDUCTOR CORP
|
| RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| PA52 |
Amplifiers - Apex Linear Op-Amp, 200V, 40A OP-AMP, 10000 uV OFFSET-MAX, 3 MHz BAND WIDTH, MDFM12
|
Cirrus Logic, Inc.
|
| LY3 LY4N LY1 LY2 LY4S LY1-0 LY1-CR LY1-D LY1F LY1L |
General Purpose Relay
Metal Oxide Resistor; Series:MP800; Resistance:0.020ohm; Resistance Tolerance: /- 5 %; Power Rating:20W; Temperature Coefficient:0 to 300 ppm/ C; Terminal Type:Radial Leaded; Package/Case:2-TO-220; Voltage Rating:300V 通用继电
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:50mA; Current, It av:40A; Forward Current:40A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes 通用继电
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:10; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 通用继电
General Purpose Relay 通用继电
RES 1206 475R 0.125W 1% 200V 100PPM/C
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:50mA; Current, It av:40A; Forward Current:40A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Power Thick Film Resistor; Series:MK; Resistance:2Mohm; Resistance Tolerance: 1%; Power Rating:0.75W; Operating Temperature Range:-55 C to C
|
International Rectifier, Corp.
Omron Electronics, LLC
OMRON[Omron Electronics LLC]
http://
|
| 2SJ598 2SJ598-Z |
P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251 TO-252
|
NEC
|
| HT1260/26OG6 |
2.6kV V[drm] Max., 1260A I[T] Max. Silicon Controlled Rectifier
|
Herrmann
|
| T308N2000TOF |
2.0kV V[drm] Max., 308A I[T] Max. Silicon Controlled Rectifier
|
Telefunken Electronic
|
| MBR4030PT1 MBR4060PT MBR4030PT MBR4035PT MBR4040PT |
RECTIFIER SCHOTTKY DUAL 40A 50V 400A-ifsm 0.8V-vf 1mA-ir TO-3P 30/TUBE
40A SCHOTTKY BARRIER RECTIFIER
|
DIODES[Diodes Incorporated]
|
