| PART |
Description |
Maker |
| STD35NF06 |
N-CHANNEL 60V 0.018 OHM 55A - DPAK - STRIPFET II POWER MOSFET
N-CHANNEL 60V - 0.018ohm - 35A DPAK STripFETII MOSFET
N-CHANNEL 60V - 0.018ohm - 35A DPAK STripFET⑩II MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STD30NF06L STD30NF06L-1 STD30NF06LT4 |
N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFET
N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET⑩ POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| RJK0656DPB-00-J5 |
60V, 40A, 5.6m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| BP35-06G BP35-08G BP35-005G BP35-01G BP35-02G BP35 |
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
|
Frontier Electronics.
|
| 2SJ598 2SJ598-Z |
P-ch power MOSFET 60V RDS(on)MAX.=130m ohm TO-251 TO-252
|
NEC
|
| RJK0629DPK RJK0629DPK13 RJK0629DPK-15 |
60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| RJK0629DPE RJK0629DPE-15 |
60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
