| PART |
Description |
Maker |
| STD30NE06L 6044 STD30NE06LT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）|52AA
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRCZ34 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)
|
International Rectifier
|
| TST30U60C |
30A, 60V Trench Schottky Rectifier
|
Taiwan Semiconductor Co...
|
| STD30NE06LT4 |
N - CHANNEL 60V - 0.025 ohm - 30A TO-252
N - CHANNEL 60V - 0.025 ohm - 30A TO-252
|
STMicroelectronics
|
| RFP30N06LE RF1S30N06LESM FN3629 |
From old datasheet system
30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs
30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs 30 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
|
| IRFZ34V |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB
HEXFET? Power MOSFET
|
International Rectifier
|
| 30SCLJQ060 |
30A 60V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package
SCHOTTKY RECTIFIER
|
International Rectifier
|
| PU4120 PU4120P PU4120Q |
V(cbp): 60V; V(ceo): 60V; V(ebo): 5V; 15W; silicon NPN triple-diffused planar darlington transistor array
(PU4120 / PU4420) SILICON NPN TRIPLE-DIFFUSED PLANAR DARLINGTON TYPE
|
Panasonic Semiconductor
|
| BR303 Q68000-A3436 SIEMENSAG-Q68000-A3436 |
SILICON MINIATURE THYRISTOR
MOSFET N-CH 500V 30A TO-268 D3
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IN5304 1N5207 1NS300 2N5283 2N5309 CR254 1N5312 1N |
CURRENT REGULATOR DIODES
Trans GP BJT NPN 60V 30A 3-Pin(2 Tab) TO-3
CURRENT REGULATOR DIODES
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
