| PART |
Description |
Maker |
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STP45NF3LL_06 B11NM60FD P11NM60FD STB11NM60FD STB1 |
N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRF3703 IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
|
International Rectifier
|
| XC9250B083QR-G XC9251 |
30V Driver Transistor Built-In Step-Down DC/DC Converters
|
Torex Semiconductor
|
| FMC7G50US60 |
IGBT
Compact & Complex Module
Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| DTD743ZE DTD743ZM |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| DTB723YM DTB723YE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
| DTB743EM DTB743EE |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
ROHM[Rohm]
|
| Q67040-S4469 IDB45E60 IDP45E60 Q67040-S4375 |
Silicon Power Diodes - 45A EmCon in TO220-2
Silicon Power Diodes - 45A EmCon in TO263
Fast Switching EmCon Diode 快速开关快恢复二极
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| FDS3692 |
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
N-Channel PowerTrench?? MOSFET 60V, 45A, 20m???
N-Channel PowerTrench MOSFET 100V, 45A, 60mohm
|
FAIRCHILD[Fairchild Semiconductor]
|
