| PART |
Description |
Maker |
| BGU7062 |
Analog high linearity low noise variable gain amplifier
|
NXP Semiconductors
|
| RFLA1018SPCK-410 RFLA1018SSR RFLA1018SSQ RFLA1018S |
Variable Gain, Low Noise, High Linearity Amplifier 1920MHz to 1980MHz
|
RF Micro Devices
|
| CHA2294-99F_00 CHA229407 |
35-40GHz Low Noise, Variable Gain Amplifier
|
United Monolithic Semiconductors
|
| AD603SQ_883B AD603_05 AD603 AD603ACHIPS AD603AQ AD |
Low Noise, 90 MHz Variable Gain Amplifier
|
AD[Analog Devices]
|
| AD600-15 |
Dual, Low Noise, Wideband Variable Gain Amplifiers
|
Analog Devices
|
| AD605BR-REEL7 AD605 AD605A AD605ACHIPS AD605AN AD6 |
Dual, Low Noise, Single-Supply Variable Gain Amplifier
|
AD[Analog Devices]
|
| CHA2293-99F_00 CHA2293 CHA2293-99F/00 |
24.5-29.5GHz Low Noise, Variable Gain Amplifier 24.5 - 29.5GHz低噪声，可变增益放大
|
United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CFY77 CFY77-08 CFY77-10 Q62702-F1559 Q62702-F1549 |
From old datasheet system
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
